10 Difference Between P-type And N-type Semiconductor

P-type and n–type semiconductor are both classification of extrinsic semiconductors. The major factor that generates a difference between p-type and n-type semiconductor is the material used in doping the intrinsic semiconductor (pure conductor).

The n-type semiconductor material is formed by addition of group V elements (pentavalent impurity) to a pure conductor intrinsic semiconductor). Examples penta-valent impurities include Arsenic, Antimony, Phosphorous, Bismuth etc. On the other hand, a p-type semiconductor material is formed by addition of group III elements, popularly referred to as trivalent impurity to a pure semiconductor. Examples of trivalent impurity include Aluminium, Gallium and Indium.

Key Difference

A p-type semiconductor is formed when group III elements of the periodic table are doped to a pure semiconductor material whereas an n-type semiconductor is formed when group V elements of the period table are doped to an intrinsic semiconductor.

Trivalent impurity like Aluminium, Gallium and Indium is added in the p-type semiconductor whereas in n-type semiconductor, penta-valent impurity like Arsenic, Antimony, Phosphorous, Bismuth etc are added.

The impurity added in p-type semiconductor provides holes referred to as Acceptor atom while in n-type semiconductor, impurity provides extra electrons referred to as Donor atom.

In a p-type semiconductor, the majority carriers are holes and minority carriers are electrons whereas in the n-type semiconductor, electrons are majority carriers and holes are minority carriers.

In the p-type semiconductor, the acceptor energy level is close to the valence band and away from the conduction band. On the other hand, in an n-type semiconductor, the donor energy level is close to the conduction band and away from the valence band.

In p-type, because of majority carrier influence, the density of holes is comparatively greater than the density of electrons. In n-type, given that majority of carriers are electrons; the density of electrons is comparatively greater than that of holes.

The Fermi level of the of the p-type semiconductor lies between the acceptor energy level and the valence band whereas Fermi level of the n-type semiconductor lies between donor energy level and the conduction band.

In p-type the major concentration of the carrier’s movement can be observed from a higher level of concentration to a lower level of concentration. On the other hand, the majority of the carrier’s movement can be seen from lower level to higher level.

In p-type semiconductor, concentration of holes is high and therefore p-type carries the positive charge. On the other hand, in n-type, the electrons are majority carriers, hence the n-type preferably carries a negative charge.

The concentration of holes is more in p-type semiconductors whereas the concentration of electrons is more in n-type.

Also Read: Difference Between Intrinsic And Extrinsic Semiconductor

BASIS OF COMPARISON	P-TYPE SEMICONDUCTOR	N-TYPE SEMICONDUCTOR
Description	A p-type semiconductor is formed when group III elements of the periodic table are doped to a pure semiconductor material.	An n-type semiconductor is formed when group V elements of the period table are doped to an intrinsic semiconductor.
Impurities	Trivalent impurity like Aluminium, Gallium and Indium is added in the p-type semiconductor.	N-type semiconductor, penta-valent impurity like Arsenic, Antimony, Phosphorous, Bismuth etc are added.
Electrons & Holes	The impurity added, provides holes referred to as Acceptor atom.	Impurity provides extra electrons referred to as Donor atom.
Majority & Minority Charge Carriers	The majority carriers are holes and minority carriers are electrons.	Electrons are majority carriers and holes are minority carriers.
Energy Level	The acceptor energy level is close to the valence band and away from the conduction band.	The donor energy level is close to the conduction band and away from the valence band.
Density Of Holes & Electrons	Because of majority carrier influence, the density of holes is comparatively greater than the density of electrons.	Given that majority of carriers are electrons; the density of electrons is comparatively greater than that of holes.
The Fermi Level	The Fermi level of the of the p-type semiconductor lies between the acceptor energy level and the valence band.	Fermi level of the n-type semiconductor lies between donor energy level and the conduction band.
Concentration Of Carrier Movement	The major concentration of the carrier’s movement can be observed from a higher level of concentration to a lower level of concentration.	The majority of the carrier’s movement can be seen from lower level to higher level.
Charge	Concentration of holes is high and therefore p-type carries the positive charge.	The electrons are majority carriers; hence the n-type preferably carries a negative charge.
Concentration of Electrons And holes.	The concentration of holes is more in p-type semiconductors.	The concentration of electrons is more in n-type.

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